IRF7317PBF
MOSFET N/P-CH 20V 6.6A/5.3A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® MOSFET array, part number IRF7317PBF, offers a complementary N-channel and P-channel configuration. This device features a 20V drain-source breakdown voltage and a continuous drain current capability of 6.6A for the N-channel and 5.3A for the P-channel, both specified at 25°C. The IRF7317PBF incorporates logic-level gate drive, simplifying interfacing with microcontrollers. Its low on-resistance of 29mOhm at 6A and 4.5V Vgs is achieved through advanced MOSFET technology. With a maximum power dissipation of 2W and a compact 8-SOIC surface mount package, this component is suitable for high-density designs. Typical applications include power switching and battery management systems across various industrial and consumer electronics sectors. The operating temperature range is -55°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6.6A, 5.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 15V |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 6A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 700mV @ 250µA |
| Supplier Device Package | 8-SO |