IRF7316PBF
MOSFET 2P-CH 30V 4.9A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF7316PBF is a dual P-channel MOSFET array designed for efficient power switching applications. This device features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) capability of 4.9A at 25°C. The low on-resistance (Rds On) of 58mOhm at 4.9A and 10V Vgs ensures minimal power dissipation, with a maximum power rating of 2W. It includes a logic-level gate feature for compatibility with lower voltage control signals. The input capacitance (Ciss) is 710pF maximum at 25V, and gate charge (Qg) is 34nC maximum at 10V. Packaged in an 8-SOIC (0.154", 3.90mm Width) for surface mounting, this component operates across a temperature range of -55°C to 150°C. Applications include automotive systems, industrial power control, and consumer electronics.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4.9A |
| Input Capacitance (Ciss) (Max) @ Vds | 710pF @ 25V |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 4.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
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