IRF7316GTRPBF
MOSFET 2P-CH 30V 4.9A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The Infineon Technologies HEXFET® IRF7316GTRPBF is a dual P-channel MOSFET array designed for surface-mount applications. This device features a continuous drain current of 4.9A at 25°C and a drain-to-source voltage rating of 30V. With a maximum on-resistance of 58mOhm at 4.9A and 10V, it offers efficient power handling with a maximum power dissipation of 2W. The MOSFETs incorporate logic-level gate technology, a gate charge of 34nC (max) at 10V, and an input capacitance (Ciss) of 710pF (max) at 25V. Packaged in an 8-SOIC (0.154", 3.90mm Width) case and supplied on tape and reel, the IRF7316GTRPBF operates across a temperature range of -55°C to 150°C. This component finds application in automotive, industrial, and consumer electronics sectors requiring efficient switching and power management.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4.9A |
| Input Capacitance (Ciss) (Max) @ Vds | 710pF @ 25V |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 4.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
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