IRF7314TRPBF
MOSFET 2P-CH 20V 5.3A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies HEXFET® MOSFET array, part number IRF7314TRPBF, is a dual P-channel device designed for efficient power switching applications. This 8-SOIC surface-mount component features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 5.3A at 25°C. The device offers a low on-resistance (Rds On) of 58mOhm maximum at 2.9A and 4.5V, coupled with a logic-level gate for compatibility with lower voltage control signals. With a maximum power dissipation of 2W and a gate charge (Qg) of 29nC at 4.5V, the IRF7314TRPBF is suitable for use in automotive, industrial, and consumer electronics power management systems. The operating temperature range is -55°C to 150°C. This component is supplied in Tape & Reel packaging.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 780pF @ 15V |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 2.9A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 700mV @ 250µA |
| Supplier Device Package | 8-SO |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
