IRF7314QTRPBF
MOSFET 2P-CH 20V 5.2A 8SOICManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies' IRF7314QTRPBF is a dual P-channel MOSFET array designed for efficient power switching applications. This component features a 20V drain-source breakdown voltage and a continuous drain current capability of 5.2A at 25°C. The low on-resistance of 58mOhm at 5.2A and 4.5V Vgs, coupled with a logic-level gate drive, ensures optimal performance in battery-powered devices and low-voltage power management. With a maximum power dissipation of 2.4W and packaged in an 8-SOIC surface-mount configuration, it is suitable for compact designs. The device exhibits an input capacitance of 913pF and a gate charge of 29nC. Its robust construction and specifications make it a reliable choice for automotive and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.4W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 913pF @ 15V |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 5.2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 700mV @ 250µA |
| Supplier Device Package | 8-SO |