IRF7314PBF
MOSFET 2P-CH 20V 5.3A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF7314PBF is a dual P-channel power MOSFET array designed for efficient switching applications. This component features a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) capability of 5.3A at 25°C. The device exhibits a low on-resistance (Rds On) of 58mOhm maximum at 2.9A and 4.5V gate-source voltage, along with a logic level gate for enhanced drive flexibility. With a gate charge (Qg) of 29nC maximum at 4.5V and an input capacitance (Ciss) of 780pF maximum at 15V, the IRF7314PBF is suitable for high-frequency operation. Housed in an 8-SOIC package for surface mounting, it offers a maximum power dissipation of 2W and operates across a temperature range of -55°C to 150°C. This component is commonly employed in automotive, consumer electronics, and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 780pF @ 15V |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 2.9A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 700mV @ 250µA |
| Supplier Device Package | 8-SO |
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