IRF7313TRPBF-1
MOSFET 2N-CH 30V 6.5A 8SOICManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® MOSFET array, part number IRF7313TRPBF-1, features a dual 2 N-channel configuration within an 8-SOIC package, suitable for surface mounting. This component offers a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 6.5A at 25°C. The Rds On is specified at a maximum of 29mOhm at 5.8A and 10V, with a gate charge (Qg) not exceeding 33nC at 10V. Input capacitance (Ciss) is a maximum of 650pF at 25V. The device has a maximum power dissipation of 2W and operates across a temperature range of -55°C to 150°C. Applications include power management and switching circuits in automotive and industrial automation sectors. The component is supplied in tape and reel packaging.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W (Ta) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 650pF @ 25V |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 5.8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SOIC |
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