IRF7313QTRPBF
MOSFET 2N-CH 30V 6.5A 8-SOICManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies' IRF7313QTRPBF is a dual N-channel MOSFET array housed in an 8-SOIC package. This device offers a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 6.5A at 25°C. The on-resistance (Rds On) is a maximum of 29mOhm at 5.8A and 10V gate-source voltage (Vgs). Key parameters include a gate charge (Qg) of 33nC at 10V and input capacitance (Ciss) of 650pF at 25V. The power dissipation capability is 2W. This MOSFET array is suitable for surface mount applications and is supplied in cut tape packaging. It finds use in automotive and industrial applications requiring efficient switching and power management.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 650pF @ 25V |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 5.8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |