IRF7313PBF
MOSFET 2N-CH 30V 6.5A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies HEXFET® MOSFET array, part number IRF7313PBF, features two N-channel devices in a surface-mount 8-SOIC package. This component offers a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 6.5A at 25°C. The on-resistance (Rds On) is a maximum of 29mOhm at 5.8A and 10V gate-source voltage. With a gate charge (Qg) of 33nC maximum and input capacitance (Ciss) of 650pF maximum, this MOSFET array is suitable for power management applications in areas such as automotive, industrial automation, and consumer electronics. The device operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 2W.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 650pF @ 25V |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 5.8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
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