IRF7311TRPBF
MOSFET 2N-CH 20V 6.6A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF7311TRPBF is a dual N-channel MOSFET array in an 8-SOIC package. This device features a 20V Drain-Source Voltage (Vdss) and a continuous Drain Current (Id) of 6.6A at 25°C. The MOSFET array offers a low on-resistance of 29mOhm maximum at 6A and 4.5V Vgs, coupled with a logic-level gate for enhanced drive flexibility. Key parameters include an input capacitance (Ciss) of 900pF maximum at 15V and a gate charge (Qg) of 27nC maximum at 4.5V. The part is supplied on tape and reel for efficient automated assembly and supports a maximum power dissipation of 2W. It operates across a wide temperature range from -55°C to 150°C. This component is suitable for applications in power management, battery charging, and general-purpose switching.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6.6A |
| Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 15V |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 6A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 700mV @ 250µA |
| Supplier Device Package | 8-SO |