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IRF7311TRPBF

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IRF7311TRPBF

MOSFET 2N-CH 20V 6.6A 8SO

Manufacturer: Infineon Technologies

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Infineon Technologies HEXFET® IRF7311TRPBF is a dual N-channel MOSFET array in an 8-SOIC package. This device features a 20V Drain-Source Voltage (Vdss) and a continuous Drain Current (Id) of 6.6A at 25°C. The MOSFET array offers a low on-resistance of 29mOhm maximum at 6A and 4.5V Vgs, coupled with a logic-level gate for enhanced drive flexibility. Key parameters include an input capacitance (Ciss) of 900pF maximum at 15V and a gate charge (Qg) of 27nC maximum at 4.5V. The part is supplied on tape and reel for efficient automated assembly and supports a maximum power dissipation of 2W. It operates across a wide temperature range from -55°C to 150°C. This component is suitable for applications in power management, battery charging, and general-purpose switching.

Additional Information

Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max2W
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C6.6A
Input Capacitance (Ciss) (Max) @ Vds900pF @ 15V
Rds On (Max) @ Id, Vgs29mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs27nC @ 4.5V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id700mV @ 250µA
Supplier Device Package8-SO

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