IRF7309QTRPBF
MOSFET N/P-CH 30V 4A/3A 8SOICManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies MOSFET array, part number IRF7309QTRPBF, features N and P-channel configurations within a surface-mount 8-SOIC package. This component offers a continuous drain current of 4A for the N-channel and 3A for the P-channel, with a drain-to-source voltage of 30V. Key electrical parameters include a maximum power dissipation of 1.4W and an Rds On rating of 50mOhm at 2.4A and 10V. Gate charge is specified at 25nC maximum at 4.5V, and input capacitance (Ciss) is 520pF maximum at 15V. This device is suitable for applications requiring efficient switching and power management, commonly found in automotive and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4A, 3A |
| Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 15V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 2.4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |