IRF7309PBF
MOSFET N/P-CH 30V 4A/3A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF7309PBF is a dual N-channel and P-channel MOSFET array designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 30V, with continuous drain current capabilities of 4A for the N-channel and 3A for the P-channel at 25°C. The N-channel MOSFET exhibits a maximum Rds(On) of 50mOhm at 2.4A and 10V, while the P-channel specification is also 50mOhm at 2.4A and -10V. Key electrical parameters include a maximum gate charge (Qg) of 25nC at 4.5V and an input capacitance (Ciss) of 520pF at 15V. The device is housed in an 8-SOIC package suitable for surface mounting, with a maximum power dissipation of 1.4W. Operating temperature range is -55°C to 150°C. This MOSFET array is commonly utilized in power management, automotive electronics, and consumer electronics sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4A, 3A |
| Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 15V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 2.4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
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