IRF7307QTRPBF
MOSFET N/P-CH 20V 5.2A/4.3A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies IRF7307QTRPBF is a dual N-channel and P-channel MOSFET array designed for high-efficiency switching applications. This component features a 20V Drain-to-Source voltage and continuous drain current ratings of 5.2A for the N-channel and 4.3A for the P-channel, both specified at 25°C. The device utilizes MOSFET technology with a logic-level gate feature, enabling operation with lower gate drive voltages. Its low on-resistance of 50mOhm maximum at 2.6A and 4.5V Vgs facilitates reduced conduction losses. Key parameters include a maximum power dissipation of 2W and a gate charge of 20nC at 4.5V. The component is housed in an 8-SOIC (0.154", 3.90mm Width) package for surface mounting and is supplied in cut tape packaging. This MOSFET array is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5.2A, 4.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 15V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 2.6A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 700mV @ 250µA |
| Supplier Device Package | 8-SO |