IRF7307PBF
MOSFET N/P-CH 20V 5.2A/4.3A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® MOSFET array, part number IRF7307PBF, offers a complementary N-channel and P-channel configuration. This device features a Drain-Source Voltage (Vdss) of 20V, with continuous drain current capabilities of 5.2A for the N-channel and 4.3A for the P-channel at 25°C. The Rds On (Max) is 50mOhm at 2.6A, 4.5V. Designed with logic level gate functionality, it presents a maximum power dissipation of 2W in a surface mount 8-SOIC package. Input capacitance (Ciss) is 660pF (Max) at 15V, and gate charge (Qg) is 20nC (Max) at 4.5V. Operating temperature range is -55°C to 150°C. This component is commonly utilized in automotive and industrial control applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5.2A, 4.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 15V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 2.6A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 700mV @ 250µA |
| Supplier Device Package | 8-SO |
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