IRF7306TR
MOSFET 2P-CH 30V 3.6A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies HEXFET® IRF7306TR is a dual P-channel MOSFET array designed for efficient power switching. This component features a continuous drain current (Id) of 3.6A at 25°C and a drain-to-source voltage (Vdss) of 30V. The device offers a low on-resistance (Rds On) of 100mOhm maximum at 1.8A and 10V, optimized for power efficiency. With a logic-level gate feature, it facilitates direct drive from low-voltage microcontrollers. The IRF7306TR is supplied in an 8-SOIC package, suitable for surface mounting, and is delivered on tape and reel. Key parameters include a gate charge (Qg) of 25nC maximum at 10V and input capacitance (Ciss) of 440pF maximum at 25V. This MOSFET array is utilized in various applications, including battery management systems and power distribution.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3.6A |
| Input Capacitance (Ciss) (Max) @ Vds | 440pF @ 25V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 1.8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
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