IRF7304TRPBF
MOSFET 2P-CH 20V 4.3A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The Infineon Technologies HEXFET® IRF7304TRPBF is a dual P-channel MOSFET array designed for versatile switching applications. This device features a 20V Drain-to-Source voltage (Vdss) and a continuous drain current (Id) of 4.3A at 25°C. With a low Rds On of 90mOhm maximum at 2.2A and 4.5V Vgs, it ensures efficient power transfer. The logic level gate capability simplifies drive circuitry. Key parameters include a 22nC gate charge (Qg) and 610pF input capacitance (Ciss). This surface mount component is packaged in an 8-SOIC (0.154", 3.90mm width) on tape and reel for automated assembly. The IRF7304TRPBF is suitable for applications in power management, battery protection, and general-purpose switching. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 610pF @ 15V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 700mV @ 250µA |
| Supplier Device Package | 8-SO |
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