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IRF7304QTRPBF

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IRF7304QTRPBF

MOSFET 2P-CH 20V 4.3A 8SOIC

Manufacturer: Infineon Technologies

Categories: FET, MOSFET Arrays

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Infineon Technologies IRF7304QTRPBF is a dual P-channel Power MOSFET designed for efficient power switching applications. This component features a maximum Drain-to-Source Voltage (Vdss) of 20V and supports a continuous Drain Current (Id) of 4.3A at 25°C. The array offers a low on-resistance (Rds On) of 90mOhm at 2.2A and 4.5V Vgs, indicative of its low conduction losses. Engineered with a logic-level gate, it is suitable for direct interfacing with lower voltage microcontrollers. Key electrical parameters include a Gate Charge (Qg) of 22nC (max) and Input Capacitance (Ciss) of 610pF (max). The device is packaged in an 8-SOIC (0.154" width) surface mount configuration, delivering up to 2W of power dissipation. This MOSFET array is commonly utilized in battery management, power distribution, and general-purpose switching within consumer electronics and industrial automation. The component is supplied in Cut Tape (CT) packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)
Technical Details:
PackagingCut Tape (CT)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Configuration2 P-Channel (Dual)
TechnologyMOSFET (Metal Oxide)
Power - Max2W
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C4.3A
Input Capacitance (Ciss) (Max) @ Vds610pF @ 15V
Rds On (Max) @ Id, Vgs90mOhm @ 2.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs22nC @ 4.5V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id700mV @ 250µA
Supplier Device Package8-SO

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