IRF7304
MOSFET 2P-CH 20V 4.3A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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The Infineon Technologies HEXFET® IRF7304 is a dual P-channel power MOSFET array designed for efficient switching applications. This component features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 4.3A at 25°C. It offers a low Rds On of 90mOhm maximum at 2.2A and 4.5V, coupled with a logic-level gate for enhanced drive flexibility. With a maximum power dissipation of 2W and a junction temperature range of -55°C to 150°C, the IRF7304 is suitable for use in power management, battery charging, and general-purpose switching circuits across various industrial and consumer electronics sectors. The device is supplied in an 8-SOIC package, facilitating surface mounting and automated assembly. Key parameters include a typical Gate Charge (Qg) of 22nC at 4.5V and an Input Capacitance (Ciss) of 610pF at 15V.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 610pF @ 15V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 700mV @ 250µA |
| Supplier Device Package | 8-SO |
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