IRF7303QTRPBF
MOSFET 2N-CH 30V 4.9A 8-SOICManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies IRF7303QTRPBF is a dual N-channel MOSFET array designed for efficient power switching applications. This component features a 30V drain-source voltage rating and a continuous drain current capability of 4.9A at 25°C. With a low on-resistance of 50mOhm maximum at 2.4A and 10V Vgs, it minimizes conduction losses. The device exhibits a gate charge of 25nC maximum at 10V and an input capacitance of 520pF maximum at 25V. Packaged in an 8-SOIC (0.154", 3.90mm Width) surface-mount configuration, it supports a maximum power dissipation of 2W. This MOSFET array is commonly employed in automotive, industrial automation, and consumer electronics sectors requiring compact and reliable power control solutions. The supplier device package is 8-SO, and it is supplied on cut tape.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4.9A |
| Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 25V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 2.4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |