IRF7303PBF
MOSFET 2N-CH 30V 4.9A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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The Infineon Technologies IRF7303PBF is a HEXFET® MOSFET array featuring two N-channel devices in a single 8-SOIC package. This component offers a continuous drain current of 4.9A at 25°C and a drain-to-source voltage (Vdss) of 30V. With a maximum power dissipation of 2W and a low on-resistance (Rds On) of 50mOhm at 2.4A and 10V, it is suitable for applications requiring efficient switching and power management. Key electrical parameters include a gate charge (Qg) of 25nC (max) and input capacitance (Ciss) of 520pF (max) at 25V. The device operates across a temperature range of -55°C to 150°C. This MOSFET array is commonly employed in automotive, industrial, and consumer electronics markets where space and performance are critical.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4.9A |
| Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 25V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 2.4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
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