IRF7301TRPBF
MOSFET 2N-CH 20V 5.2A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies HEXFET® IRF7301TRPBF is a dual N-channel MOSFET array designed for surface mount applications. This component features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 5.2A at 25°C. The array offers a low on-resistance of 50mOhm maximum at 2.6A and 4.5V, with a logic level gate for enhanced control. Key electrical parameters include a gate charge (Qg) of 20nC maximum at 4.5V and input capacitance (Ciss) of 660pF maximum at 15V. Packaged in an 8-SOIC (0.154", 3.90mm Width) and supplied on tape and reel, the IRF7301TRPBF supports a maximum power dissipation of 2W and operates across a temperature range of -55°C to 150°C. This device finds application in various industrial and automotive power management solutions.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 15V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 2.6A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 700mV @ 250µA |
| Supplier Device Package | 8-SO |
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