IRF7301PBF
MOSFET 2N-CH 20V 5.2A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies HEXFET® MOSFET array, part number IRF7301PBF, offers a dual N-channel configuration with a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 5.2A at 25°C. This surface-mount device features a logic-level gate, enabling operation with lower gate drive voltages. It exhibits a maximum on-resistance (Rds On) of 50mOhm at 2.6A and 4.5V, with a gate charge (Qg) of 20nC at 4.5V. The 8-SOIC package provides a robust solution for applications requiring efficient power switching. Key parameters include an input capacitance (Ciss) of 660pF at 15V and a maximum power dissipation of 2W. This component is suitable for use in automotive and industrial automation systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 15V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 2.6A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 700mV @ 250µA |
| Supplier Device Package | 8-SO |