IRF7106
MOSFET N/P-CH 20V 3A/2.5A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies HEXFET® IRF7106 is a dual N-channel and P-channel MOSFET array in an 8-SOIC package. This device offers a 20V drain-to-source breakdown voltage, with continuous drain current capabilities of 3A for the N-channel and 2.5A for the P-channel, both specified at 25°C. The MOSFET array features a maximum on-resistance of 125mOhm at 1A drain current and 10V gate-source voltage for the N-channel, and a similar specification for the P-channel. Key electrical parameters include a maximum gate charge of 25nC at 10V and an input capacitance of 300pF at 15V. With a maximum power dissipation of 2W, this component is suitable for surface mount applications and finds use in automotive and industrial control systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3A, 2.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 15V |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 1A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
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