IRF7105QTRPBF
MOSFET N/P-CH 25V 8-SOICManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies IRF7105QTRPBF is a MOSFET array featuring complementary N-channel and P-channel transistors. This device offers a Drain to Source Voltage (Vdss) of 25V, with continuous drain current capabilities of 3.5A for the N-channel and 2.3A for the P-channel at 25°C. The array is housed in an 8-SOIC package suitable for surface mounting, with a maximum power dissipation of 2W. Key parameters include a maximum Rds On of 100mOhm at 1A and 10V, input capacitance (Ciss) of 330pF at 15V, and gate charge (Qg) of 27nC at 10V. The threshold voltage (Vgs(th)) is specified at 3V maximum for 250µA. This component is utilized in applications within the automotive and industrial sectors. The product is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A, 2.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 330pF @ 15V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 1A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SO |
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