IRF7105PBF
MOSFET N/P-CH 25V 3.5A/2.3A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies HEXFET® MOSFET N/P-CH Array, part number IRF7105PBF, offers a 25V drain-to-source voltage with continuous drain currents of 3.5A and 2.3A. This device features N and P-channel configurations in a surface mount 8-SOIC package. Key electrical characteristics include a maximum Rds On of 100mOhm at 1A, 10V, and a gate charge of 27nC at 10V. Input capacitance (Ciss) is rated at a maximum of 330pF at 15V. The MOSFET array operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 2W. This component is suitable for applications across automotive, industrial automation, and power management sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A, 2.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 330pF @ 15V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 1A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SO |
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