IRF7104TRPBF
MOSFET 2P-CH 20V 2.3A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF7104TRPBF is a dual P-channel power MOSFET array designed for efficient switching applications. This surface-mount device features a 20V drain-source voltage rating and a continuous drain current capability of 2.3A at 25°C. The IRF7104TRPBF offers a low on-resistance of 250mOhm maximum at 1A, 10V, and utilizes a logic-level gate for compatibility with lower voltage control signals. Key parameters include a gate charge of 25nC maximum at 10V and input capacitance of 290pF maximum at 15V. The component is supplied in an 8-SOIC package, designed for tape and reel packaging. Typical applications include power management, battery protection, and portable electronics. The device operates across a wide temperature range of -55°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 15V |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 1A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SO |
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