IRF7104PBF
MOSFET 2P-CH 20V 2.3A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies HEXFET® IRF7104PBF is a dual P-channel MOSFET array designed for efficient power switching. This component features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 2.3A at 25°C. The Rds(On) is specified at a maximum of 250mOhm when Id is 1A and Vgs is 10V. With a logic level gate, it offers enhanced driving flexibility. The device has a maximum power dissipation of 2W and operates across a temperature range of -55°C to 150°C. Key parameters include input capacitance (Ciss) of 290pF at 15V and gate charge (Qg) of 25nC at 10V. The IRF7104PBF is supplied in an 8-SOIC package for surface mounting and is commonly utilized in automotive and industrial applications requiring compact and reliable power management solutions.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 15V |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 1A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SO |
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