IRF7103QTRPBF
MOSFET 2N-CH 50V 3A 8-SOICManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies IRF7103QTRPBF is a dual N-channel MOSFET array designed for efficient power switching applications. This component features a 50V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 3A at 25°C. The low on-resistance of 130mOhm at 3A and 10V gate-source voltage (Vgs) contributes to reduced power dissipation, with a maximum power rating of 2.4W. Key electrical characteristics include a gate charge (Qg) of 15nC (max) at 10V and input capacitance (Ciss) of 255pF (max) at 25V. The device utilizes surface mount technology, housed in an 8-SOIC package with a width of 3.90mm. This MOSFET array is suitable for use in automotive and industrial control systems requiring compact and reliable power management solutions. The product is supplied in cut tape packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.4W |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25°C | 3A |
| Input Capacitance (Ciss) (Max) @ Vds | 255pF @ 25V |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SO |
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