IRF7103Q
MOSFET 2N-CH 50V 3A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF7103Q is a dual N-channel MOSFET array designed for demanding applications. This component features a 50V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 3A at 25°C. The on-resistance (Rds On) is a maximum of 130mOhm at 3A and 10V Vgs. With an input capacitance (Ciss) of 255pF at 25V Vds and a gate charge (Qg) of 15nC at 10V Vgs, it offers efficient switching characteristics. The device dissipates a maximum power of 2.4W and is packaged in an 8-SOIC (8-SO) surface-mount configuration, suitable for high-density board designs. Operating temperature range is -55°C to 175°C (TJ). This MOSFET array finds application in automotive and industrial control systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.4W |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25°C | 3A |
| Input Capacitance (Ciss) (Max) @ Vds | 255pF @ 25V |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SO |