IRF7103PBF
MOSFET 2N-CH 50V 3A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF7103PBF is a dual N-channel MOSFET array designed for surface mount applications. This component offers a continuous drain current of 3A at 25°C and a drain-to-source voltage of 50V. Key electrical characteristics include a maximum Rds(On) of 130mOhm at 3A and 10V, with a gate charge of 30nC at 10V. Input capacitance (Ciss) is rated at 290pF maximum at 25V. The device operates within a temperature range of -55°C to 150°C and is packaged in an 8-SOIC (0.154", 3.90mm width) form factor. Power dissipation is limited to 2W. This MOSFET array finds application in power management and switching circuits across various industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25°C | 3A |
| Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 25V |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SO |