IRF7102
MOSFET 2N-CH 50V 2A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF7102 is a dual N-channel MOSFET array designed for surface mount applications. This component features a Drain-Source Voltage (Vdss) of 50V and a continuous Drain Current (Id) of 2A at 25°C. The on-resistance (Rds On) is a maximum of 300mOhm at 1.5A and 10V. Gate Charge (Qg) is specified at 6.6nC (max) at 10V, with Input Capacitance (Ciss) at 120pF (max) at 25V. The device has a maximum power dissipation of 2W and is supplied in an 8-SOIC package. This MOSFET array is utilized in various industrial and consumer electronics applications requiring efficient switching and signal control.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 50V |
| Current - Continuous Drain (Id) @ 25°C | 2A |
| Input Capacitance (Ciss) (Max) @ Vds | 120pF @ 25V |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 1.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 6.6nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SO |