IRF7101TRPBF
MOSFET 2N-CH 20V 3.5A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF7101TRPBF is a dual N-channel MOSFET array designed for power management applications. This component features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 3.5A at 25°C. The Rds On is specified at a maximum of 100mOhm at 1.8A and 10V. With a logic-level gate, it offers enhanced compatibility with lower voltage control signals. The device supports a maximum power dissipation of 2W and is housed in an 8-SOIC package for surface mounting, supplied on tape and reel. Key electrical parameters include a Gate Charge (Qg) of 15nC at 10V and an Input Capacitance (Ciss) of 320pF at 15V. This MOSFET array is suitable for use in automotive and industrial power switching circuits. Operating temperature range is -55°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 320pF @ 15V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 1.8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SO |
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