IRF7101PBF
MOSFET 2N-CH 20V 3.5A 8SOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF7101PBF is a dual N-channel Power MOSFET array designed for efficient switching applications. This device features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 3.5A at 25°C. The MOSFET array offers a low on-resistance of 100mOhm maximum at 1.8A and 10V. With a logic-level gate, it is suitable for low-voltage control circuitry. Key parameters include a Gate Charge (Qg) of 15nC at 10V and Input Capacitance (Ciss) of 320pF at 15V. The IRF7101PBF is presented in an 8-SOIC surface-mount package with a maximum power dissipation of 2W. Operating temperature range is from -55°C to 150°C. This component finds application in power management, battery charging, and consumer electronics.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 320pF @ 15V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 1.8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SO |