IRF6802SDTR1PBF
MOSFET 2N-CH 25V 16A DIRECTFETSAManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF6802SDTR1PBF is a 2 N-channel MOSFET array designed for high-efficiency power switching applications. This device features a 25V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 16A at 25°C. The low on-resistance of 4.2mOhm at 16A and 10V gate-source voltage (Vgs) minimizes conduction losses. With a logic level gate, it offers compatibility with lower voltage drive signals. Key parameters include a gate charge (Qg) of 13nC (max) at 4.5V and input capacitance (Ciss) of 1350pF (max) at 13V. The component is supplied in a DIRECTFET™ Isometric SA surface mount package, on tape and reel (TR), with a maximum power dissipation of 1.7W. Operating temperature range is -40°C to 150°C (TJ). This MOSFET array is suitable for use in automotive, industrial, and consumer electronics power management systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric SA |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.7W |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 16A |
| Input Capacitance (Ciss) (Max) @ Vds | 1350pF @ 13V |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 16A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.1V @ 35µA |
| Supplier Device Package | DIRECTFET™ SA |
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