IRF6723M2DTR1P
MOSFET 2N-CH 30V 15A DIRECTFETMAManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF6723M2DTR1P is a 2 N-channel MOSFET array designed for high-performance applications. This device features a 30V drain-source voltage rating and a continuous drain current capability of 15A at 25°C. The Rds(on) is specified at a maximum of 6.6mOhm at 15A and 10V, indicating low conduction losses. With a gate charge (Qg) of 14nC at 4.5V, it offers efficient switching characteristics. The input capacitance (Ciss) is a maximum of 1380pF at 15V.
This MOSFET array is housed in a surface mount DIRECTFET™ Isometric MA package, supplied on tape and reel. It operates within a temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 2.7W. Key features include a logic level gate for compatibility with lower voltage drive signals. The IRF6723M2DTR1P is suitable for use in power management solutions across automotive, industrial automation, and consumer electronics sectors.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MA |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.7W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 15A |
| Input Capacitance (Ciss) (Max) @ Vds | 1380pF @ 15V |
| Rds On (Max) @ Id, Vgs | 6.6mOhm @ 15A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Supplier Device Package | DIRECTFET™ MA |
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