IRF6156
MOSFET 2N-CH 20V 6.5A 6FLIPFETManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies IRF6156 is a 2 N-channel MOSFET array designed for efficient power switching. This device offers a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) capability of 6.5A at 25°C. The MOSFETs feature a logic-level gate, enabling operation with lower gate drive voltages. Key electrical characteristics include a maximum Rds On of 40mOhm at 6.5A and 4.5V, and a gate charge (Qg) of 18nC maximum at 5V. Input capacitance (Ciss) is rated at 950pF maximum at 15V. The IRF6156 is packaged in a 6-FlipFet™ surface mount configuration and supports a maximum power dissipation of 2.5W. Its operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-FlipFet™ |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.5W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 950pF @ 15V |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 6.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | 6-FlipFet™ |
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