IRF6150
MOSFET 2P-CH 20V 7.9A 16FLIPFETManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF6150 is a 20V, 2 P-channel MOSFET array designed for efficient power switching applications. This device features a low on-resistance of 36mOhm at 7.9A and 4.5V Vgs, enabling reduced conduction losses. The IRF6150 offers a continuous drain current capability of 7.9A and a maximum power dissipation of 3W, making it suitable for various power management tasks. Its 16-FlipFet™ package facilitates a compact and high-density design. This component is commonly utilized in automotive, industrial automation, and consumer electronics sectors where robust power control is essential. The device operates across a wide temperature range of -55°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 16-WFBGA |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 7.9A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 7.9A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | 16-FlipFet™ |
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