IRF5852TR
MOSFET 2N-CH 20V 2.7A 6TSOPManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF5852TR is a dual N-channel MOSFET array designed for efficient power switching applications. This device features a 20V Drain-to-Source Voltage (Vdss) and a continuous drain current of 2.7A at 25°C. The low on-resistance of 90mOhm is achieved at 2.7A and 4.5V gate-source voltage, with a logic-level gate feature for compatibility with lower voltage drive signals. Key parameters include a maximum power dissipation of 960mW and a gate charge (Qg) of 6nC at 4.5V. The input capacitance (Ciss) is a maximum of 400pF at 15V. This component is supplied in a 6-TSOP surface mount package, available on tape and reel for automated assembly. It finds application in various industries including consumer electronics, industrial automation, and telecommunications. The operating temperature range is -55°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 960mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.7A |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 15V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.7A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.25V @ 250µA |
| Supplier Device Package | 6-TSOP |
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