IRF5852
MOSFET 2N-CH 20V 2.7A 6TSOPManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies HEXFET® IRF5852 is a dual N-channel MOSFET array packaged in a 6-TSOP (SOT-23-6 Thin). This device features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 2.7A at 25°C, with a maximum on-resistance (Rds On) of 90mOhm at 2.7A and 4.5V. The MOSFET technology incorporates a logic level gate, facilitating operation with lower gate drive voltages, indicated by a typical Gate Threshold Voltage (Vgs(th)) of 1.25V at 250µA. Input capacitance (Ciss) is 400pF maximum at 15V, and gate charge (Qg) is 6nC maximum at 4.5V. With a maximum power dissipation of 960mW, this MOSFET array is suitable for applications in consumer electronics and power management solutions.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 960mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.7A |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 15V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.7A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.25V @ 250µA |
| Supplier Device Package | 6-TSOP |
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