IRF5851TRPBF
MOSFET N/P-CH 20V 2.7A 6TSOPManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF5851TRPBF is a MOSFET array featuring complementary N-channel and P-channel configurations. This device offers a Drain-to-Source Voltage (Vdss) of 20V with continuous drain currents of 2.7A for the N-channel and 2.2A for the P-channel. It boasts a low Rds(On) of 90mOhm at 2.7A and 4.5V, indicative of efficient power handling. The logic-level gate feature simplifies drive requirements, and the device exhibits a maximum gate charge (Qg) of 6nC at 4.5V. With a maximum power dissipation of 960mW and a wide operating temperature range from -55°C to 150°C, this surface-mount component is supplied in a 6-TSOP package on tape and reel. This MOSFET array is commonly utilized in power management applications across automotive, industrial, and consumer electronics sectors.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 960mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.7A, 2.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 15V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.7A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.25V @ 250µA |
| Supplier Device Package | 6-TSOP |