IRF5851TR
MOSFET N/P-CH 20V 2.7A 6TSOPManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF5851TR is a dual N-channel and P-channel MOSFET array designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 20V and supports continuous drain currents of 2.7A for the N-channel and 2.2A for the P-channel, respectively. With a low Rds(On) of 90mOhm at 2.7A and 4.5V, it minimizes conduction losses. The device operates with a logic level gate requiring a Vgs(th) of 1.25V at 250µA, and exhibits a gate charge of 6nC at 4.5V. Input capacitance (Ciss) is rated at 400pF at 15V. Packaged in a compact 6-TSOP (SOT-23-6 Thin) for surface mounting, this array is suitable for demanding thermal management with a maximum power dissipation of 960mW. Operating temperature ranges from -55°C to 150°C. This component is commonly utilized in portable electronics and battery management systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 960mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.7A, 2.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 15V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.7A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.25V @ 250µA |
| Supplier Device Package | 6-TSOP |
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