IRF5851
MOSFET N/P-CH 20V 2.7A 6TSOPManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF5851 is a MOSFET array featuring complementary N-channel and P-channel transistors. This device offers a drain-source voltage (Vdss) of 20V with continuous drain current capabilities of 2.7A for the N-channel and 2.2A for the P-channel, both specified at 25°C. The IRF5851 boasts a low Rds(on) of 90mOhm maximum at 2.7A and 4.5V Vgs, indicating efficient conduction. It is designed with a logic level gate feature, enabling operation with lower gate drive voltages. The component exhibits a typical gate charge (Qg) of 6nC at 4.5V Vgs and an input capacitance (Ciss) of 400pF maximum at 15V Vds. With a maximum power dissipation of 960mW, this MOSFET array is housed in a 6-TSOP (SOT-23-6 Thin) package suitable for surface mounting. The IRF5851 finds application in power management solutions across various industries.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 960mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.7A, 2.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 15V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.7A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.25V @ 250µA |
| Supplier Device Package | 6-TSOP |
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