IRF5850TR
MOSFET 2P-CH 20V 2.2A 6TSOPManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF5850TR is a dual P-channel Power MOSFET designed for surface-mount applications. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 2.2A at 25°C. The Rds(On) is specified at a maximum of 135mOhm at 2.2A and 4.5V, indicating efficient power handling. With a Logic Level Gate feature and a Vgs(th) of 1.2V, it is suitable for low-voltage drive systems. Key parameters include an input capacitance (Ciss) of 320pF at 15V and a gate charge (Qg) of 5.4nC at 4.5V. The device is rated for a maximum power dissipation of 960mW and operates across a temperature range of -55°C to 150°C. Packaged in a 6-TSOP, this MOSFET array is commonly utilized in automotive, industrial, and consumer electronics sectors requiring compact, high-performance switching solutions.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 960mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 320pF @ 15V |
| Rds On (Max) @ Id, Vgs | 135mOhm @ 2.2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 5.4nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | 6-TSOP |
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