IRF5850
MOSFET 2P-CH 20V 2.2A 6TSOPManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies MOSFET Array, part number IRF5850, is a dual P-channel device designed for demanding applications. This 20V device features a continuous drain current capability of 2.2A and a low on-resistance of 135mOhm at 2.2A and 4.5V Vgs. The IRF5850 utilizes MOSFET technology and is supplied in a 6-TSOP surface mount package. Its logic level gate ensures compatibility with lower voltage control signals. Key parameters include a maximum power dissipation of 960mW, an input capacitance (Ciss) of 320pF at 15V, and a gate charge (Qg) of 5.4nC at 4.5V. This component is frequently employed in power management and switching circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 960mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 320pF @ 15V |
| Rds On (Max) @ Id, Vgs | 135mOhm @ 2.2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 5.4nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | 6-TSOP |
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