IRF5810TR
MOSFET 2P-CH 20V 2.9A 6TSOPManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® IRF5810TR is a dual P-channel power MOSFET designed for efficient switching applications. This device features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 2.9A at 25°C. The IRF5810TR boasts low on-resistance, specified at 90mOhm maximum at 2.9A and 4.5V Vgs. With a Gate Charge (Qg) of 9.6nC maximum at 4.5V, it offers fast switching characteristics. The MOSFET array is housed in a compact 6-TSOP (SOT-23-6 Thin) package, suitable for surface mounting. Key parameters include an input capacitance (Ciss) of 650pF maximum at 16V and a power dissipation of 960mW. The device operates across a temperature range of -55°C to 150°C. Applications for this component include power management, battery protection, and general-purpose switching in consumer electronics and industrial systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 960mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.9A |
| Input Capacitance (Ciss) (Max) @ Vds | 650pF @ 16V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.9A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 9.6nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | 6-TSOP |
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