IRF5810
MOSFET 2P-CH 20V 2.9A 6TSOPManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® MOSFET array, part number IRF5810, features two P-channel MOSFETs in a 6-TSOP package. This device offers a continuous drain current of 2.9A and a drain-to-source voltage (Vdss) of 20V. The Rds On is specified at a maximum of 90mOhm at 2.9A and 4.5V Vgs. With a logic level gate and gate charge (Qg) of 9.6nC at 4.5V, it is suitable for applications requiring efficient switching. The maximum power dissipation is 960mW. This component finds application in consumer electronics and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 960mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.9A |
| Input Capacitance (Ciss) (Max) @ Vds | 650pF @ 16V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.9A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 9.6nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | 6-TSOP |
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