IRF40H233XTMA1
MOSFET 2N-CH 40V 8TDSONManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies' IRF40H233XTMA1 is a dual N-channel MOSFET designed for high-efficiency power management in automotive and industrial applications. This device features a 40V drain-to-source voltage (Vdss) and is housed in an 8-PowerTDFN (PG-TDSON-8-900) package, suitable for surface mount assembly. The MOSFET array configuration offers a compact solution for space-constrained designs. Its advanced MOSFET technology ensures reliable performance in demanding environments, making it a critical component for power switching and control circuits. The tape and reel packaging facilitates automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | - |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | PG-TDSON-8-900 |
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