IRF40H233ATMA1
MOSFET 2N-CH 40V 65A 8TDSONManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies' StrongIRFET™ IRF40H233ATMA1 is a dual N-channel MOSFET array in a PG-TDSON-8-4 package. This component features a 40V drain-source breakdown voltage (Vdss) and supports a continuous drain current (Id) of 65A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 6.2mOhm at 35A and 10V Vgs. Key electrical characteristics include a gate charge (Qg) of 57nC at 10V and input capacitance (Ciss) of 2200pF at 20V Vds. Power dissipation is rated at 3.8W (Ta) and 50W (Tc). This surface mount device operates across a temperature range of -55°C to 175°C (TJ). The IRF40H233ATMA1 is suitable for applications in automotive and industrial power management. It is supplied on tape and reel.
Additional Information
Series: StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.8W (Ta), 50W (Tc) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 2200pF @ 20V |
| Rds On (Max) @ Id, Vgs | 6.2mOhm @ 35A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 57nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3.9V @ 50µA |
| Supplier Device Package | PG-TDSON-8-4 |
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