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IRF3546MTRPBF

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IRF3546MTRPBF

MOSFET 4N-CH 25V 16A/20A 41QFN

Manufacturer: Infineon Technologies

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Infineon Technologies' IRF3546MTRPBF is a 4-channel N-channel MOSFET array featuring 25V drain-source voltage and a continuous drain current of 16A (Tc) per channel, with a peak current of 20A (Tc). This device is housed in a 41-PQFN (6x8) package for surface mounting and offers a low on-resistance of 3.9mOhm at 27A and 10V. Key characteristics include a logic-level gate drive, maximum gate charge of 15nC at 4.5V, and input capacitance of 1310pF at 13V. The operating temperature range is -40°C to 150°C. This MOSFET array is suitable for applications in power management, battery charging, and automotive systems. It is supplied in tape and reel packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case41-PowerVFQFN
Mounting TypeSurface Mount
Configuration4 N-Channel
Operating Temperature-40°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max-
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C16A (Tc), 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds1310pF @ 13V
Rds On (Max) @ Id, Vgs3.9mOhm @ 27A, 10V
Gate Charge (Qg) (Max) @ Vgs15nC @ 4.5V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id2.1V @ 35µA
Supplier Device Package41-PQFN (6x8)

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