IPG20N06S4L14ATMA1
MOSFET 2N-CH 60V 20A 8TDSONManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies OptiMOS™ IPG20N06S4L14ATMA1 is a dual N-channel power MOSFET designed for demanding automotive applications. This device features a 60V drain-source voltage rating and a continuous drain current capability of 20A at 25°C, dissipating up to 50W. The low Rds(on) of 13.7mOhm at 17A and 10V, coupled with a logic level gate, ensures efficient switching performance. With a gate charge of 39nC (max) at 10V and an input capacitance of 2890pF (max) at 25V, it is optimized for fast switching. The component is supplied in an 8-TDSON package for surface mounting and is AEC-Q101 qualified, making it suitable for power management, motor control, and battery management systems within the automotive sector. It operates across a temperature range of -55°C to 175°C.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 50W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Input Capacitance (Ciss) (Max) @ Vds | 2890pF @ 25V |
| Rds On (Max) @ Id, Vgs | 13.7mOhm @ 17A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.2V @ 20µA |
| Supplier Device Package | PG-TDSON-8-4 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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